tsal6200 www.vishay.com vishay semiconductors rev. 2.3, 24-aug-11 1 document number: 81010 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high power infrared emitting diode, 940 nm, gaalas/gaas description tsal6200 is an infrared, 940 nm emitting diode in gaalas/gaas technology with high radiant power molded in a blue-gray plastic package. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? peak wavelength: p = 940 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 17 ? low forward voltage ? suitable for high pulse current operation ? good spectral matching with si photodetectors ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec note ** please see document vishay material category policy: www.vishay.com/doc?99902 applications ? infrared remote control units with high power requirements ? free air transmission systems ? infrared source for optical counters and card readers note ? test conditions see table basic characteristics note ? moq: minimum order quantity 94 8389 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) tsal6200 60 17 940 800 ordering information ordering code packaging remarks package form tsal6200 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1.5 a power dissipation p v 160 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance j unction/ambient j-std-051, lead s 7 mm soldered on pcb r thja 230 k/w
tsal6200 www.vishay.com vishay semiconductors rev. 2.3, 24-aug-11 2 document number: 81010 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature 0 20 40 60 80 100 120 140 160 180 0 102030405060708090100 21211 t amb - ambient temperature (c) p v - power dissipation (mw) r thja = 230 k/w 0 20 40 60 80 100 120 0 10 203040 50607080 90100 t amb - ambient temperature (c) 21212 i f - forward current (ma) r thja = 230 k/w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.35 1.6 v i f = 1 a, t p = 100 s v f 2.6 3 v temperature coefficient of v f i f = 1 ma tk vf - 1.8 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 25 pf radiant intensity i f = 100 ma, t p = 20 ms i e 40 60 200 mw/sr i f = 1 a, t p = 100 s i e 340 500 mw/sr radiant power i f = 100 ma, t p = 20 ms e 35 mw temperature coefficient of e i f = 20 ma tk e - 0.6 %/k angle of half intensity ? 17 deg peak wavelength i f = 100 ma p 940 nm spectral bandwidth i f = 100 ma ? 50 nm temperature coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 800 ns fall time i f = 100 ma t f 800 ns virtual source diameter method: 63 % encircled energy d 2.4 mm
tsal6200 www.vishay.com vishay semiconductors rev. 2.3, 24-aug-11 3 document number: 81010 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - radiant intensity vs. forward current fig. 6 - radiant power vs. forward current fig. 7 - relative radiant intens ity/power vs. ambient temperature fig. 8 - relative radi ant power vs. wavelength t p - pulse duration (ms) 96 11987 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 i - forward current (a) f t p /t = 0.01 i fsm = 1 a (single pulse) 0.05 0.1 0.5 1.0 v f - forward voltage (v) 13600 10 1 10 0 10 2 10 3 10 4 t p = 100 s t p /t = 0.001 0 i f - forward current (ma) 4 3 2 1 13601 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 i f - forward current (ma) i - radiant intensity (mw/sr) e - radiant power (mw) e i f - forward current (ma) 13602 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 - 10 10 50 0 100 0 0.4 0.8 1.2 1.6 i e rel ; 140 94 7993 i f = 20 ma e rel t amb - ambient temperature (c) 890 0 0.25 0.5 0.75 1.0 1.25 - wavelength (nm) 14291 - relative radiant power e rel i f = 100 ma 990 940
tsal6200 www.vishay.com vishay semiconductors rev. 2.3, 24-aug-11 4 document number: 81010 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - relative radiant in tensity vs. angular displacement package dimensions in millimeters 0.4 0.2 0 14329 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative radiant intensity e rel ? - angular displacement 34.3 0.55 0.5 + 0.15 - 0.05 ? 5 0.15 area not plane technical drawings according to din specifications 8.7 0.3 2.54 nom. 1 min. < 0.7 0.5 + 0.15 - 0.05 a c ? 5.8 0.15 7.7 0.15 0.6 + 0.2 - 0.1 r 2.49 (sphere) (3.5) drawing-no.: 6.544-5259.06-4 issue: 6; 19.05.09 19257
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